| PART |
Description |
Maker |
| W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
|
Winbond Electronics
|
| IC42S32202 |
512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
|
Integrated Circuit Solution
|
| M12L64322A-6BIG M12L64322A-6TIG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12S64322A-6BG M12S64322A-6TG M12S64322A-7BG M12S6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| A43L0616A A43L0616AV A43L0616AV-5 A43L0616AV-55 A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
| A43E06321 |
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
|
AMICC
|
| A43L0632G-6F A43L0632G-7F A43L0632G-6UF A43L0632G- |
512K X 32 Bit X 2 Banks Synchronous DRAM 12k × 32位2银行同步DRAM
|
AMIC Technology Corporation
http://
AMIC Technology, Corp.
TM Technology, Inc.
|
| K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| A43E06321G-95UF A43E06321G-75UF A43E06321G-75F A43 |
General Purpose
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM 12k × 32位2银行低功耗同步DRAM
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
